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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?ce 800vcoolmos?cepowertransistor IPA80R310CE datasheet rev.2.1 final powermanagement&multimarket
2 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet to-220fp 1description coolmos?ceisarevolutionarytechnologyforhighvoltagepower mosfets.thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. coolmos?800vcecomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. features ?highvoltagetechnology ?extremedv/dtrated ?highpeakcurrentcapability ?lowgatecharge ?loweffectivecapacitances ?pb-freeplating,rohscompliant,halogenfreemoldcompound ?qualifiedforconsumergradeapplications applications ledlightingandadapterinqrflybacktopology pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j=25c 800 v r ds(on),max 310 m w q g.typ 91 nc i d,pulse 51 a e oss @400v 6.7 j body diode di/dt 400 a/s type/orderingcode package marking relatedlinks IPA80R310CE pg-to 220 fullpak 8r310ce see appendix a d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 16.7 10.6 a t c = 25c t c = 100c pulsed drain current 2) i d,pulse - - 51 a t c =25c avalanche energy, single pulse e as - - 670 mj i d =3.4a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.50 mj i d =3.4a; v dd =50v; see table 10 avalanche current, repetitive i ar - - 3.40 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...640v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation p tot - - 35 w t c =25c storage temperature t stg -40 - 150 c - operating junction temperature t j -40 - 150 c - mounting torque - - - 50 ncm m2.5 screws continuous diode forward current i s - - 16.7 a t c =25c diode pulse current 2) i s,pulse - - 51 a t c =25c reverse diode dv/dt 3) dv/dt - - 4 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 8 maximum diode commutation speed di f /dt - - 400 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 8 insulation withstand voltage for to-220fp v iso - - 2500 v v rms , t c =25c, t =1min 1) limited by t j max <150c. 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet 3thermalcharacteristics table3thermalcharacteristicsto-220fullpak values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 3.6 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet 4electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 800 - - v v gs =0v, i d =0.25ma gate threshold voltage v (gs)th 2.1 3.0 3.9 v v ds = v gs , i d =1ma zero gate voltage drain current i dss - - - - 25 250 m a v ds =800, v gs =0v, t j =25c v ds =800, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.25 0.78 0.31 - w v gs =10v, i d =11a, t j =25c v gs =10v, i d =11a, t j =150c gate resistance r g - 0.7 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 2320 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 90 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 59 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 124 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 25 - ns v dd =400v, v gs =10v, i d =16.7a, r g =4.7 w ;seetable9 rise time t r - 15 - ns v dd =400v, v gs =10v, i d =16.7a, r g =4.7 w ;seetable9 turn-off delay time t d(off) - 72 - ns v dd =400v, v gs =10v, i d =16.7a, r g =4.7 w ;seetable9 fall time t f - 6 - ns v dd =400v, v gs =10v, i d =16.7a, r g =4.7 w ;seetable9 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 12 - nc v dd =640v, i d =16.7a, v gs =0to10v gate to drain charge q gd - 46 - nc v dd =640v, i d =16.7a, v gs =0to10v gate charge total q g - 91 - nc v dd =640v, i d =16.7a, v gs =0to10v gate plateau voltage v plateau - 6.0 - v v dd =640v, i d =16.7a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to480v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to480v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 1 - v v gs =0v, i f =16.7a, t j =25c reverse recovery time t rr - 550 - ns v r =400v, i f =16.7a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 15 - c v r =400v, i f =16.7a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 51 - a v r =400v, i f =16.7a,d i f /d t =100a/s; see table 8 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 25 0 10 20 30 40 50 60 20 v 10 v 6.5 v 6 v 5.5 v 5 v i d =f( v ds ); t j =25c; t p =10s;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 25 0 5 10 15 20 25 30 35 20 v 10 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =150c; t p =10s;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 10 20 30 40 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 4 v 4.5 v 5 v 5.5 v 6 v 6.5 v 10 v r ds(on) =f( i d ); t j =150c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 98% typ r ds(on) =f( t j ); i d =11.0a; v gs =10v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 0 10 20 30 40 50 60 150 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ; t p =10s;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 160 v 640 v v gs =f( q gate ); i d =17apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 150 c i f =f( v sd ); t p =10s;parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 100 200 300 400 500 600 700 e as =f( t j ); i d =3.4a; v dd =50v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 v br(dss) =f( t j ); i d =0.25ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 e oss = f (v ds ) d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
12 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet 6testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
13 800vcoolmos?cepowertransistor IPA80R310CE rev.2.1,2015-06-23 final data sheet 7packageoutlines figure 1 outline pg-to 220 fullpak, dimensions in mm/inches d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d '$ + 9 ) ; 9$ * =# = . 3 @3 .# 0 )# ' ),/ '# )1(7/*06 01" z8b00003319 2.5 4*8,5,10 04 05-05-2014 ,557* )'6* *7412*'0 241-*(6,10 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 ,0(+*5 0.193 max 0.112 5('.* 5mm 0 2.5 9# 0.0370.95 1.38 0.054 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs
14 800v coolmos? ce power transistor IPA80R310CE rev. 2.1, 2015-06-23 final data sheet 8 appendix a table 11 related links ? ifx coolmos tm ce webpage: www.infineon.com ? ifx coolmos tm ce application note: www.infineon.com ? ifx coolmos tm ce simulation model: www.infineon.com ? ifx design tools: www.infineon.com d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d '$ + 9 ) ; 9$ * =# = . 3 @3 .# 0 )# ' ),/ '# )1(7/*06 01" z8b00003319 2.5 4*8,5,10 04 05-05-2014 ,557* )'6* *7412*'0 241-*(6,10 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 ,0(+*5 0.193 max 0.112 5('.* 5mm 0 2.5 9# 0.0370.95 1.38 0.054 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs
15 800v coolmos? ce power transistor IPA80R310CE rev. 2.1, 2015-06-23 final data sheet revision history IPA80R310CE revision: 2015-06-23, rev. 2.1 previous revision revision date subjects (major changes since last revision) 2.0 2014-09-25 release of final version 2.1 2015-06-23 continuous current id update we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com published by infineon technologies ag 81726 mnchen, germany ? 2015 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d '$ + 9 ) ; 9$ * =# = . 3 @3 .# 0 )# ' ),/ '# )1(7/*06 01" z8b00003319 2.5 4*8,5,10 04 05-05-2014 ,557* )'6* *7412*'0 241-*(6,10 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 ,0(+*5 0.193 max 0.112 5('.* 5mm 0 2.5 9# 0.0370.95 1.38 0.054 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs

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